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Interfacial behavior of a flip-chip structure under thermal testing

机译:倒装芯片结构在热测试下的界面行为

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摘要

In this paper, the interfacial behavior of a flip-chip structure under thermal testing was investigated using high sensitivity, real-time Moire interferometry. The model package studied was a sandwich structure consisting of a silicon chip, epoxy underfill and FR4 substrate. The behavior of FR4-underfill and silicon-underfill interfaces of the specimen under certain thermal loading was examined. The results show that the shear strain variation increases significantly along the interfaces, with the maximum shear strain concentration occurring at the edge of the specimen. At the edge, the maximum shear strain occurs at the silicon-underfill interface, and the FR4-underfill interface experiences a slightly lower shear strain. The creep effect is more dominant in the FR4-underfill interface when the specimen is heated for 2 h at 100°C. Upon cooling to 20°C, both the interfaces of the specimen experience partial strain recovery.
机译:在本文中,使用高灵敏度实时莫尔干涉仪研究了倒装芯片结构在热测试下的界面行为。所研究的模型套件是由硅芯片,环氧树脂底部填充胶和FR4基板组成的三明治结构。研究了在一定热负荷下样品的FR4底部填充和硅底部填充界面的行为。结果表明,剪切应变变化沿界面显着增加,最大剪切应变浓度出现在试样的边缘。在边缘,最大剪切应变发生在硅-底部填充界面,而FR4-底部填充界面经历的剪切应变略低。当样品在100°C下加热2小时时,在FR4底部填充界面中蠕变效应更为明显。冷却至20°C后,样品的两个界面都经历了部分应变恢复。

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